EFFECT OF LANDAU LEVELS UPON TUNNEL CURRENTS IN INDIUM ANTIMONIDE

被引:23
作者
CHYNOWETH, AG
LOGAN, RA
WOLFF, PA
机构
关键词
D O I
10.1103/PhysRevLett.5.548
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:548 / 550
页数:3
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共 5 条
[1]   MAGNETO-TUNNELING IN INSB [J].
CALAWA, AR ;
REDIKER, RH ;
LAX, B ;
MCWHORTER, AL .
PHYSICAL REVIEW LETTERS, 1960, 5 (02) :55-57
[2]  
CHYNOWETH AG, 1960, B AM PHYS SOC, V5, P374
[3]  
ESAKI L, COMMUNICATION
[4]   DIRECT OBSERVATION OF POLARONS AND PHONONS DURING TUNNELING IN GROUP-3-5 SEMICONDUCTOR JUNCTIONS [J].
HALL, RN ;
RACETTE, JH ;
EHRENREICH, H .
PHYSICAL REVIEW LETTERS, 1960, 4 (09) :456-458
[5]   THE ENERGY-DEPENDENCE OF ELECTRON MASS IN INDIUM ANTIMONIDE DETERMINED FROM MEASUREMENTS OF THE INFRARED FARADAY EFFECT [J].
SMITH, SD ;
MOSS, TS ;
TAYLOR, KW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (1-2) :131-139