VANISHING SCHOTTKY BARRIERS IN DIAMOND METAL INTERFACES

被引：18

作者：

ERWIN, SC ^{[1
]}

PICKETT, WE ^{[1
]}

机构：

[1] USN,RES LAB,COMPLEX SYST THEORY BRANCH,WASHINGTON,DC 20375

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 81卷 / 11期

关键词：

D O I：

10.1016/0038-1098(92)90863-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present theoretical evidence that Schottky-barrier heights may, for certain types of interfaces, be far more sensitive to interface geometry than previously suspected. We have identified two classes of diamond/metal interface orientations, one of which leads to Schottky-barrier heights of order 1 eV, the other to barrier heights that are very small or zero. This striking difference can be traced to details of the gap-state band structure that arise from different bonding mechanisms, for which the precise atomic geometry plays a crucial role.

引用

页码：891 / 894

页数：4

共 16 条

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