STRUCTURAL AND OPTICAL-PROPERTIES OF AMORPHOUS IN1-XPX FILMS

被引：6

作者：

BAKER, SH ^{[1
]}

BAYLISS, SC ^{[1
]}

GURMAN, SJ ^{[1
]}

ELGUN, N ^{[1
]}

WILLIAMS, BT ^{[1
]}

DAVIS, EA ^{[1
]}

机构：

[1] LOUGHBOROUGH UNIV TECHNOL,DEPT PHYS & ASTRON,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1994年 / 169卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(94)90230-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In1-xP(x) films have been prepared by rf sputtering with compositions in the range 0.4 < x < 0.9. The samples are completely amorphous for x > 0.5 but In-rich films contained crystallites. Extended X-ray absorption fine structure (EXAFS) and X-ray photoelectron spectroscopy measurements indicate that there is chemical disorder in the structural network of the a-In1-xP(x) films, although chemical ordering is predominant. Optical absorption data are found to be consistent with this assertion. Partial coordination numbers, deduced from the EXAFS measurements, are interpreted using thermodynamic arguments.

引用

页码：111 / 125

页数：15

共 32 条

[1]

ASAL R, UNPUB

[2] STRUCTURAL INVESTIGATION OF THE A-GA1-XASX SYSTEM [J].

BAKER, SH ;

MANSSOR, MI ;

GURMAN, SJ ;

BAYLISS, SC ;

DAVIS, EA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 144 (01) :63-69

[3] THE EFFECT OF VARYING SUBSTRATE-TEMPERATURE ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF SPUTTERED GAAS FILMS [J].

BAKER, SH ;

BAYLISS, SC ;

GURMAN, SJ ;

ELGUN, N ;

BATES, JS ;

DAVIS, EA .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (05) :519-534

[4]

BAYLISS SC, UNPUB J PHYS CONDENS

[5] MODELING STRUCTURE OF AMORPHOUS TETRAHEDRALLY COORDINATED SEMICONDUCTORS .1. [J].

CONNELL, GAN ;

TEMKIN, RJ .

PHYSICAL REVIEW B, 1974, 9 (12) :5323-5326

[6]

DAVIS EA, 1977, P S STRUCT NONCR MAT, P205

[7] LOCAL ORDER IN AMORPHOUS-III-V COMPOUNDS A1-XBX BY ELECTRON-DIFFRACTION, IN RELATION WITH ELECTRONIC-PROPERTIES [J].

DIXMIER, J ;

GHEORGHIU, A ;

THEYE, ML .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (13) :2271-2281

[8] DEPTH DEPENDENCE FOR EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY DETECTED VIA ELECTRON YIELD IN HE AND IN VACUUM [J].

ELAM, WT ;

KIRKLAND, JP ;

NEISER, RA ;

WOLF, PD .

PHYSICAL REVIEW B, 1988, 38 (01) :26-30

[9]

ELLIOTT SR, 1984, PHYSICS AMORPHOUS MA

[10]

ELLIOTT SR, 1985, J PHYS-PARIS, V46, P3489

← 1 2 3 4 →