HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS

被引：914
作者：
NAKAMURA, S
IWASA, N
SENOH, M
MUKAI, T
机构：
[1] Nichia Chemical Industries Ltd, Kaminaka, Anan, Tokushima, 774
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 5A期
关键词：
P-TYPE GAN; THERMAL ANNEALING; HYDROGENATION; ATOMIC HYDROGEN; HALL MEASUREMENT; PHOTOLUMINESCENCE;
D O I：
10.1143/JJAP.31.1258
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-resistivity p-type GaN films, which were obtained by N2-ambient thermal annealing or low-energy electron-beam irradiation (LEEBI) treatment, showed a resistivity as high as 1 x 10(6) OMEGA . cm after NH3-ambient thermal annealing at temperatures above 600-degrees-C. In the case of N2-ambient thermal annealing at temperatures between room temperature and 1000-degrees-C, the low-resistivity p-type GaN films showed no change in resistivity, which was almost constant between 2-OMEGA . cm and 8-OMEGA . cm. These results indicate that atomic hydrogen produced by NH3 dissociation at temperatures above 400-degrees-C is related to the hole compensation mechanism. A hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed. The formation of acceptor-H neutral complexes causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
引用
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页码：1258 / 1266
页数：9
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