THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE

被引：114

作者：

LAUGHLIN, RB ^{[1
]}

JOANNOPOULOS, JD ^{[1
]}

CHADI, DJ ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.21.5733

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5733 / 5744

页数：12

共 46 条

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