REVIEW OF BINARY ALLOY FORMATION BY THIN-FILM INTERACTIONS

被引：246
作者：
OTTAVIANI, G
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期
关键词：
D O I：
10.1116/1.570170
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1112 / 1119
页数：8
相关论文
共 73 条
[1]  
AGAJANIAN AH, 1974, TR221745 IBM TECH RE
[2]  
ANDERSON P, 1979, RC7543 IBM RES REP
[3]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[4]   FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J].
BAGLIN, J ;
DEMPSEY, J ;
HAMMER, W ;
DHEURLE, F ;
PETERSSON, S ;
SERRANO, C .
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) :641-661
[5]  
BAGLIN J, 1978, APPL PHYS LETT, V33, P269
[6]  
BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4
[7]   GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].
BOWER, RW ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&
[8]   PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J].
CANALI, C ;
CATELLANI, C ;
PRUDENZIATI, M ;
WADLIN, WH ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45
[9]   FORMATION OF NI AND PT SILICIDE 1ST PHASE - DOMINANT ROLE OF REACTION-KINETICS [J].
CANALI, C ;
CATELLANI, F ;
OTTAVIANI, G ;
PRUDENZIATI, M .
APPLIED PHYSICS LETTERS, 1978, 33 (02) :187-190
[10]   PHASE-DIAGRAMS AND METAL-RICH SILICIDE FORMATION [J].
CANALI, C ;
MAJNI, G ;
OTTAVIANI, G ;
CELOTTI, G .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :255-258
12345678