FREE-CARRIER RADIATION PEAK IN GAAS DUE TO VALENCE-BAND MAXIMA ARISING FROM TERMS LINEAR IN K

被引：5

作者：

GILLEO, MA

BAILEY, PT

机构：

[1] Monsanto Company, Saint Louis

来源：

PHYSICAL REVIEW | 1969年 / 187卷 / 03期

关键词：

D O I：

10.1103/PhysRev.187.1181

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new peak has been observed 0.4 meV above the direct band-to-band-transition radiation at 1.5202 eV in the 1.4a°K photoluminescence spectrum of high-purity epitaxial GaAs. This new peak is attributed to the recombination of free electrons of nonzero k with free holes in the linear-k valence-band maxima, which are estimated to be a3×105 cm-1 away from and a1×10-4 eV above the k=0 maximum. © 1969 The American Physical Society.

引用

页码：1181 / &

共 6 条

[1] SPIN-ORBIT COUPLING EFFECTS IN ZINC BLENDE STRUCTURES [J].

DRESSELHAUS, G .

PHYSICAL REVIEW, 1955, 100 (02) :580-586

[2] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS [J].

GILLEO, MA ;

BAILEY, PT ;

HILL, DE .

PHYSICAL REVIEW, 1968, 174 (03) :898-&

[3] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261

[4]

KANE EO, 1966, SEMICONDUCTORS SEMIM, V1, P95

[5] LINEAR-K-] VALENCE-BAND SPLITTING IN INSB [J].

PIDGEON, CR ;

GROVES, SH .

PHYSICAL REVIEW LETTERS, 1968, 20 (18) :1003-&

[6]

PINSON WEJ, 1969, B AM PHYS SOC, V14, P417

← 1 →