共 50 条
- [1] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421EPHRATH, LM
- [2] SELECTIVE REACTIVE ION ETCHING OF SILICON DIOXIDESOLID STATE TECHNOLOGY, 1984, 27 (04) : 214 - 219CHANG, JS
- [3] NEAR-SURFACE DAMAGE AND CONTAMINATION AFTER CF4-H2 REACTIVE ION ETCHING OF SIJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1441 - 1447OEHRLEIN, GSTROMP, RMTSANG, JCLEE, YHPETRILLO, EJ
- [4] ETCH SELECTIVITY OF SILICON DIOXIDE OVER TITANIUM SILICIDE USING CF4/H2 REACTIVE ION ETCHINGJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (12) : 3812 - 3815JASO, MAROBEY, SWOEHRLEIN, GS
- [5] REACTIVE ION ETCHING OF SILICON DIOXIDEABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1982, 184 (SEP): : 102 - INORLIGHT, RWSEE, FC
- [6] REACTIVE ION ETCHING OF SILICON DIOXIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1152 - 1154LIGHT, RWSEE, FC
- [8] REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN CF4 PLASMAS CONTAINING H-2 OR C2F4 ADDITIVESJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (09) : 2748 - 2752SIMKO, JPOEHRLEIN, GS
- [9] ETCHING MECHANISM OF SIO2 IN CF4-H2 MIXED GAS PLASMAJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C88 - C88ARIKADO, THORIUCHI, S
- [10] MECHANISM OF DRY ETCHING OF SILICON DIOXIDE - A CASE OF DIRECT REACTIVE ION ETCHINGJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 180 - 186STEINBRUCHEL, CLEHMANN, HWFRICK, K