STRUCTURAL TRANSFORMATION OF AS-STABILIZED SURFACES CAUSED BY GA-DEPOSITION DETECTED BY TIME-RESOLVED SURFACE PHOTOABSORPTION

被引：5
作者：
UWAI, K
KOBAYASHI, N
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)00786-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Evolution of surface structures during conversion from various As-stabilized surfaces to Ga-stabilized ones is observed by surface photo-absorption. Desorption of As dimers parallel to [110] is observed during the structural change of c(4 x 4) and (2 x 4)gamma. The evolution of Ga- and As-related peaks is isolated in surface dielectric anisotropy spectra, which are determined using p- and s-polarized surface photo-absorption spectra during the conversion of (2 x 4)beta to a Ga-stabilized (4 X 2) surface.
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页码：101 / 106
页数：6
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