SELF-DIFFUSION IN INTRINSIC SILICON

被引：66
作者：
KALINOWSKI, L
SEGUIN, R
机构：
[1] Centre d'Etudes Nucléaires de Saclay, Section de Recherches de Métallurgie Physique, 91190 Gir sur Yvette
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期
关键词：
D O I：
10.1063/1.91097
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The silicon self-diffusion in intrinsic silicon was investigated by a new method using stable isotope 30Si and the ion-analyzer technique. The temperature dependence of the diffusion coefficient was obtained in the range from 885 to 1175°C from which an activation energy 110.6 kcal/mole was obtained.
引用
收藏
页码：211 / 213
页数：3
相关论文
共 18 条
[1]  
Boltaks B.I., 1963, DIFFUSION SEMICONDUC
[2]  
BOURGOIN J, 1976, 19TH C MET CTR ET NU, V11, P695
[3]  
CASEY HC, 1975, DIFFUSION SEMICONDUC, P181
[4]   SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].
FAIRFIEL.JM ;
MASTERS, BJ .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&
[5]   DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].
FULLER, CS ;
DITZENBERGER, JA .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553
[6]   METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J].
GHOSHTAGORE, RN .
PHYSICAL REVIEW LETTERS, 1966, 16 (20) :890-+
[7]  
HU SM, 1973, ATOMIC DIFFUSION SEM, P248
[8]   SILICON SELF-DIFFUSION - (CZOCHRALSKI SINGLE CRYSTAL - SI31 - TEMPERATURE DEPENDENCE - ACTIVATION ENERGY 118.5 KCAL/MOLE - 1100 TO 1300 DEGREES C - E) [J].
MASTERS, BJ ;
FAIRFIELD, JM .
APPLIED PHYSICS LETTERS, 1966, 8 (11) :280-+
[9]  
MAYER HJ, 1976, INT C RAD EFFECTS SE
[10]  
OSHCHERIN BN, 1963, PHYS STATUS SOLIDI, V3, pK61
12