HIGH-DOSE IMPLANTATIONS OF P, AS, AND SB IN SILICON - A COMPARISON OF ROOM-TEMPERATURE IMPLANTATIONS FOLLOWED BY A 550 DEGREES C ANNEAL AND IMPLANTATIONS CONDUCTED AT 600 DEGREES C

被引：27
作者：
CROWDER, BL
FAIRFIELD, JM
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 03期
关键词：
D O I：
10.1149/1.2407512
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：363 / +
页数：1
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