ELECTRICAL AND OPTICAL-PROPERTIES OF DEFECTS IN SILICON INTRODUCED BY HIGH-TEMPERATURE ELECTRON-IRRADIATION

被引：36
|
作者：
XU, JG
LU, F
SUN, HH
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 05期
关键词：
D O I：
10.1103/PhysRevB.38.3395
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3395 / 3399
页数：5
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