ELECTRICAL AND OPTICAL-PROPERTIES OF DEFECTS IN SILICON INTRODUCED BY HIGH-TEMPERATURE ELECTRON-IRRADIATION

被引：37

作者：

XU, JG

LU, F

SUN, HH

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.38.3395

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3395 / 3399

页数：5

共 12 条

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