HIGH-POWER 780 NM ALGAAS QUANTUM-WELL LASERS AND THEIR RELIABLE OPERATION

被引：15
作者：
YAMASHITA, S
NAKATSUKA, S
UCHIDA, K
KAWANO, T
KAJIMURA, T
机构：
[1] Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期
关键词：
D O I：
10.1109/3.89975
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-power laser in the 780 nm wavelength region has been realized by introducing an AlGaAs ternary alloy quantum-well structure. Investigations focus on the characteristic temperature and catastrophic optical damage (COD) level. It is found that a triple quantum-well (TQW) active layer structure has superior characteristics for high-power operation. Stable operation for over 1000 h under 50-degrees-C and 60 mW conditions is achieved. A relatively high characteristic temperature of around 150 K is also obtained.
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页码：1544 / 1549
页数：6
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