EVIDENCE FOR SUPERCONDUCTIVITY IN LOW-TEMPERATURE GROWN GAAS

被引：36

作者：

BARANOWSKI, JM ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

YAU, WF ^{[1
]}

WEBER, ER ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.66.3079

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Magnetic-field-modulated microwave absorption and dc susceptibility measurements have detected evidence for superconductivity in As-rich GaAs layers grown by molecular-beam epitaxy at low temperatures (LT-GaAs). The transition temperature from the normal to the superconducting phase is 10 K. Electron microscopy of these layers found a new, As-rich layered structure in LT-GaAs that is most likely the origin of the superconductivity.

引用

页码：3079 / 3082

页数：4

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