DISTRIBUTION OF ENERGY STATES AT BAND EDGES IN GAAS LASER DIODES

被引：5
作者：
BURRELL, GJ
MOSS, TS
HETHERINGTON, A
机构：
[1] Royal Aircraft Establishment, Farnborough, England
来源：
SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 10期
关键词：
D O I：
10.1016/0038-1101(69)90056-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experimental observations of gain perpendicular to the junction in a GaAs laser diode at 80°K have been related to the spontaneous emission rate in order to determine the splitting of the quasi-Fermi levels appropriate to the active region of the junction. An analysis of the observed spontaneous emission spectra (corrected for self absorption) has shown that radiative recombination results from transitions between a pair of exponential band tails in which the density of states is of the form ρ{variant}(E) ∝ expE/E0. A study of a Zn-diffused diode made from Se-doped GaAs (n = 1·3 × 1018cm-3) gave rise to values for the parameter E0 of 8·3 meV for the conduction band and 8·0 meV for the valence band. © 1969.
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页码：787 / +
页数：1
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