DYNAMICAL TRANSMISSION EFFECTS AND IMPACT IONIZATION IN HOT-ELECTRON TRANSPORT ACROSS NISI2/SI(111)7X7 INTERFACES

被引：8
作者：
BAUER, A [1 ]
LUDEKE, R [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 04期
关键词：
D O I：
10.1116/1.587228
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Impact ionization and interface transmission, two important processes in hot-electron transport in semiconductor structures, have been studied by ballistic electron emission microscopy (BEEM) at interfaces of NiSi2/n-Si(111)7 X 7. The analysis of BEEM spectra taken in pinholes of thin NiSi2 films allows a direct determination of the quantum yield of impact ionization in Si over a wide energy range (>7 eV). BEEM images and spectra recorded on NiSi2 terraces show evidence for the conservation of transverse momentum and a small probability for normal interface transmission up to high energies (almost-equal-to 4 eV above the Fermi energy), in accordance with dynamical calculations of the transmission probabilities.
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收藏
页码：2667 / 2674
页数：8
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