GROWTH AND STRUCTURE OF COPPER THIN-FILMS DEPOSITED ON (0001) SAPPHIRE BY MOLECULAR-BEAM EPITAXY

被引：118

作者：

DEHM, G ^{[1
]}

RUHLE, M ^{[1
]}

DING, G ^{[1
]}

RAJ, R ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1995年 / 71卷 / 06期

关键词：

D O I：

10.1080/01418639508241899

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of copper films grown on (0001) sapphire by molecular beam epitaxy at 200 degrees C and 600 degrees C was studied by in situ reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM). Both RHEED and TEM confirm that growth is epitaxial at 200 degrees C, but {111}(Cu) textured at 600 degrees C. However, in both instances growth occurs with the copper (111) plane parallel-to the interface. In the case of the 200 degrees C films the close-packed directions of copper lie parallel to the close-packed directions of sapphire in the interfacial plane; these films contain low angle grain boundaries with the interface normal to the axis of rotation. High resolution and atomic resolution electron microscopy of the interface viewed in cross-section suggest that the atomic structure of the copper/sapphire interface is incoherent. The textured growth at 600 degrees C and near single crystal growth at 200 degrees C are explained in terms of entropy contributions to the free energy of the Cu/Al2O3 interface.

引用

页码：1111 / 1124

页数：14

共 21 条

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