THE EFFECT OF SUBSTRATE BIAS ON HOT-CARRIER DAMAGE IN NMOS DEVICES

被引：9

作者：

DOYLE, BS ^{[1
]}

MARCHETAUX, JC ^{[1
]}

BOURCERIE, M ^{[1
]}

BOUDOU, A ^{[1
]}

机构：

[1] BULL CO,CTR RECH,TECH GRP,F-78340 LES CLAYES BOIS,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 01期

关键词：

D O I：

10.1109/55.31665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：11 / 13

页数：3

共 11 条

[1]

ABBAS SA, 1975, IEDM TECH DIG, P35

[2]

COTRELL PE, 1979, IEEE T ELECTRON DEV, V26, P520

[3] DYNAMIC CHANNEL HOT-CARRIER DEGRADATION OF NMOS TRANSISTORS BY ENHANCED ELECTRON-HOLE INJECTION INTO THE OXIDE [J].

DOYLE, BS ;

BOURCERIE, M ;

MARCHETAUX, JC ;

BOUDOU, A .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :237-239

[4]

DOYLE BS, 1987, ESSDERC P, P155

[5] HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J].

HOFMANN, KR ;

WERNER, C ;

WEBER, W ;

DORDA, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :691-699

[6] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION [J].

HSU, FC ;

TAM, S .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :50-52

[7]

NING TH, 1977, J ELECTRON MATER, V6, P93

[8] A NOVEL FLOATING-GATE METHOD FOR MEASUREMENT OF ULTRA-LOW HOLE AND ELECTRON GATE CURRENTS IN MOS-TRANSISTORS [J].

NISSANCOHEN, Y .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :561-563

[9] OBSERVATION OF HOT-HOLE INJECTION IN NMOS TRANSISTORS USING A MODIFIED FLOATING-GATE TECHNIQUE [J].

SAKS, NS ;

HEREMANS, PL ;

VANDENHOVE, L ;

MAES, HE ;

DEKEERSMAECKER, RF ;

DECLERCK, GJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) :1529-1534

[10]

Takeda E., 1983, International Electron Devices Meeting 1983. Technical Digest, P396

← 1 2 →