MEASUREMENT OF SUBSURFACE DAMAGE IN SILICON-WAFERS

被引：42

作者：

BISMAYER, U

BRINKSMEIER, E

GUTTLER, B

SEIBT, H

MENZ, C

机构：

[1] Institute for Mineralogy and SFB 173, University of Hannover, Hannover

[2] Institute for Production Engineering and Machine Tools, University of Hannover, Hannover

[3] Physikalisch Technische Bundesanstalt, Braunschweig

来源：

PRECISION ENGINEERING-JOURNAL OF THE AMERICAN SOCIETY FOR PRECISION ENGINEERING | 1994年 / 16卷 / 02期

关键词：

SILICON WAFERS; MACHINING; SUBSURFACE DAMAGE; RESIDUAL STRESSES; X-RAY DIFFRACTION; RAMAN SPECTROSCOPY;

D O I：

10.1016/0141-6359(94)90199-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article presents new experimental results on the measurement of surface and subsurface damage with a focus on the residual stress state of machined silicon single crystals. The x-ray diffraction technique is widely applied as a nondestructive method to determine residual stresses from the lattice deformations of the crystal. To obtain a higher resolution of x-ray diffraction, a modified diffractometer with a multicrystal monochromator was used. An optical technique that is useful for the measurement of stress-depth profiles is micro-Raman spectroscopy. With the low penetration depth of the laser, light stresses close to the surface were detected quantitatively.

引用

页码：139 / 144

页数：6

共 20 条

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