STUDY OF SI-SIO2 INTERFACE STATE WITH NEGATIVE BIAS-HEAT TREATMENT APPROACH

被引：8
作者：
KOBAYASHI, I [1 ]
NAKAHARA, M [1 ]
ATSUMI, M [1 ]
机构：
[1] FUJITSU LTD, IC ENGN DEPT, HYOGO, KOBE, JAPAN
来源：
PROCEEDINGS OF THE IEEE | 1973年 / 61卷 / 02期
关键词：
D O I：
10.1109/PROC.1973.9019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：249 / 250
页数：2
相关论文
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