MECHANISM OF CHEMICAL VAPOR-DEPOSITION OF SILICON

被引：45

|

作者：

NISHIZAWA, J

SAITO, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 52卷 / APR期

关键词：

D O I：

10.1016/0022-0248(81)90196-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：213 / 218

页数：6

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