QUARTER-MICROMETER GATE ION-IMPLANTED GAAS-MESFETS WITH AN FT OF 126 GHZ

被引：15

作者：

WANG, GW

FENG, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 08期

关键词：

D O I：

10.1109/55.31765

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：386 / 388

页数：3

共 7 条

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[3]

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IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :41-43

[6] 0.2-MU-M GATE-LENGTH ATOMIC-PLANAR DOPED PSEUDOMORPHIC AL0.3GA0.7AS/IN0.25GA0.75AS MODFETS WITH FT OVER 120 GHZ [J].

NGUYEN, LD ;

RADULESCU, DC ;

TASKER, PJ ;

SCHAFF, WJ ;

EASTMAN, LF .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :374-376

[7] ULTRAHIGH-FREQUENCY PERFORMANCE OF SUBMICROMETER-GATE ION-IMPLANTED GAAS-MESFETS [J].

WANG, GW ;

FENG, M ;

LAU, CL ;

ITO, C ;

LEPKOWSKI, TR .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) :206-208

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