A-SIC-H-A-SI-H HETEROJUNCTION SOLAR-CELL HAVING MORE THAN 7.1-PERCENT CONVERSION EFFICIENCY

被引：203

作者：

TAWADA, Y

OKAMOTO, H

HAMAKAWA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 03期

关键词：

D O I：

10.1063/1.92692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：237 / 239

页数：3

共 19 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].

ANDERSON, DA ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16

[2] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[3]

CARLSON DE, 1980, TRIESTE SEMICONDUCTO

[4]

Dalal V. L., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1066

[5] RECENT DEVELOPMENTS IN AMORPHOUS-SILICON P-N-JUNCTION DEVICES [J].

GIBSON, RA ;

SPEAR, WE ;

LECOMBER, PG ;

SNELL, AJ .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :725-730

[6] PRESENT STATUS OF SOLAR PHOTO-VOLTAIC R AND D PROJECTS IN JAPAN [J].

HAMAKAWA, Y .

SURFACE SCIENCE, 1979, 86 (JUL) :444-461

[7] NEW TYPE OF AMORPHOUS SILICON PHOTO-VOLTAIC CELL GENERATING MORE THAN 2.0-V [J].

HAMAKAWA, Y ;

OKAMOTO, H ;

NITTA, Y .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :187-189

[8]

HANAK JJ, 1980, P 14 IEEE PHOT SPEC, P1209

[9] METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS USING AMORPHOUS SI-F-H ALLOYS [J].

MADAN, A ;

MCGILL, J ;

CZUBATYJ, W ;

YANG, J ;

OVSHINSKY, SR .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :826-828

[10]

NAKAMURA G, 1980, 12TH P C SOL STAT DE, P291

← 1 2 →