Modeling of the Substrate Topography upon Nanosized Profiling by Focused Ion Beams

被引：6

作者：

Ageev, O. A. ^{[1
]}

Alekseev, A. M. ^{[2
]}

Vnukova, A. V. ^{[1
]}

Gromov, A. L. ^{[1
]}

Kolomiytsev, A. S. ^{[1
]}

Konoplev, B. G. ^{[1
]}

机构：

[1] Southern Fed Univ, Dept Elect & Instrumentat, Per Nekrasovskii 44, Taganrog 347928, Russia

[2] Univ Glasgow, Kelvin Nanocharacterisat Ctr, Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

来源：

NANOTECHNOLOGIES IN RUSSIA | 2014年 / 9卷 / 1-2期

关键词：

Ions;

D O I：

10.1134/S1995078014010030

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper presents the results of a mathematical model developed for calculating two-dimensional topography of the substrate surface when etching by a focused ion beam (FIB). A simulation of the two-dimensional relief of the substrate when irradiated by the FIB was carried out. An algorithm and software were developed making it possible to forecast the parameters of the surface relief depending on the characteristics of the ion beam and scanning system. The algorithm takes into account the redeposition of the sputtered material. The adequacy of the model is confirmed by a comparison with the results of experimental investigations.

引用

页码：31 / 37

页数：7

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