THE PARAMETERS OF PARTIALLY DEGENERATE SEMICONDUCTORS

被引:16
作者
BLAKEMORE, JS
机构
来源
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A | 1952年 / 65卷 / 390期
关键词
D O I
10.1088/0370-1298/65/6/116
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:460 / 461
页数:2
相关论文
共 6 条
[1]  
BLAKEMORE JS, 1952, IN PRESS COMMUNICATI
[2]   THE ELECTRIC CONDUCTIVITY OF SIMPLE SEMICONDUCTORS [J].
EHRENBERG, W .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1950, 63 (361) :75-76
[3]   THE PARAMETERS OF SIMPLE EXCESS SEMICONDUCTORS [J].
LANDSBERG, PT ;
MACKAY, RW ;
MCRONALD, AD .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1951, 64 (377) :476-480
[4]  
McDougall J., 1938, PHILOS T R SOC A, V237, P67, DOI [10.1098/rsta.1938.0004, DOI 10.1098/RSTA.1938.0004]
[5]   THE ELECTRICAL CONDUCTIVITY OF GERMANIUM [J].
PUTLEY, EH .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1949, 62 (353) :284-292
[6]  
Shifrin K, 1944, J PHYS-USSR, V8, P242