STRAINED INGAAS QUANTUM-WELL LASERS WITH SMALL-DIVERGENCE ANGLES FOR HIGH-POWER PUMP MODULES

被引：5
|
作者：
TEMMYO, J [1 ]
SHIMIZU, M [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, TOKAI, IBARAKI 31911, JAPAN
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 24期
关键词：
SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS; OPTICAL PUMPING; GALLIUM INDIUM ARSENIDE;
D O I：
10.1049/el:19941403
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Epitaxial stuctures were designed for high-power strained InGaAs/AlGaAs quantum well lasers with low vertical-divergence emitting angles. The vertical divergence angles achieved were down to similar to 20 degrees. High power output 1.02 mu m pump modules with well-designed strained quantum well lasers have been developed for a 1.31 mu m band Pr+-doped fiber amplifier. A maximum optical fibre output of 157mW was obtained.
引用
收藏
页码：2046 / 2047
页数：2
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