INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110)

被引：36
作者：
DOSE, V
GOSSMANN, HJ
STRAUB, D
机构：
来源：
SURFACE SCIENCE | 1982年 / 117卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(82)90522-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：387 / 393
页数：7
相关论文
共 17 条
[1]   SURFACE-STRUCTURE AND ORBITAL SYMMETRIES OF (110) SURFACE-STATES OF GAAS [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :631-636
[2]  
CHADI DJ, COMMUNICATION
[3]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[4]   ISOCHROMAT SPECTROSCOPY USING SXAPS EQUIPMENT [J].
CONRAD, M ;
DOSE, V ;
FAUSTER, T ;
SCHEIDT, H .
APPLIED PHYSICS, 1979, 20 (01) :37-40
[5]   VUV ISOCHROMAT SPECTROSCOPY [J].
DOSE, V .
APPLIED PHYSICS, 1977, 14 (01) :117-118
[6]   PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605
[7]  
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[8]   EVIDENCE FOR SUBSURFACE ATOMIC DISPLACEMENTS OF GAAS(110) SURFACE FROM LEED/CMTA ANALYSIS [J].
KAHN, A ;
CISNEROS, G ;
BONN, M ;
MARK, P ;
DUKE, CB .
SURFACE SCIENCE, 1978, 71 (02) :387-396
[9]  
KUNZ C, 1971, NBS SPEC PUBL, V323, P275
[10]   SELF-CONSISTENT ELECTRONIC STATES FOR RECONSTRUCTED SI VACANCY MODELS [J].
LOUIE, SG ;
SCHLUTER, M ;
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 13 (04) :1654-1663
12