POROUS SILICON - BASE MATERIAL FOR NANOTECHNOLOGIES

被引：16
作者：
JESKE, M
SCHULTZE, JW
MUNDER, H
机构：
[1] UNIV DUSSELDORF, INST PHYS CHEM & ELEKTROCHEM, D-40225 DUSSELDORF, GERMANY
[2] FORSCHUNGSZENTRUM JULICH, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY
来源：
ELECTROCHIMICA ACTA | 1995年 / 40卷 / 10期
关键词：
POROUS SILICON; NANOTECHNOLOGY; METAL DEPOSITION; SILICON OXIDATION; SURFACE ANALYSIS;
D O I：
10.1016/0013-4686(95)00046-H
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Porous Silicon as regular nanostructured material is used for an electrochemical preparation of different binary and ternary nanostructured compound systems. The nanostructured films are analysed by means of XPS and sputter depth profiling.
引用
收藏
页码：1435 / 1438
页数：4
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