EFFECT OF NONTHERMALLY ACTIVATED HOPPING ON OVERLAYER MORPHOLOGY - SCANNING-TUNNELING-MICROSCOPY STUDY OF TI/GAAS(110)

被引：11
作者：
YANG, YN
TRAFAS, BM
LUO, YS
SIEFERT, RL
WEAVER, JH
机构：
来源：
PHYSICAL REVIEW B | 1991年 / 44卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.44.5720
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Scanning tunneling microscopy has been used to examine the morphology of the evolving Ti/GaAs(110) interface for atom deposition at 300 K. The results show that thermally activated surface diffusion is minimal throughout the growth process because of the large activation energy established by chemical bonding. However, surface hopping is observed because of the dynamics associated with the cooling of the impinging atoms. Single Ti atoms form stable bonds with the substrate but unique bonding sites were not distinguishable and the areas around these sites were not disrupted.
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页码：5720 / 5725
页数：6
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