SURFACE SEGREGATION MECHANISM DURING TWO-DIMENSIONAL EPITAXIAL-GROWTH - THE CASE OF DOPANTS IN SI AND GAAS MOLECULAR-BEAM EPITAXY

被引：33

作者：

ANDRIEU, S ^{[1
]}

DAVITAYA, FA ^{[1
]}

PFISTER, JC ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 07期

关键词：

D O I：

10.1063/1.342752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2681 / 2687

页数：7

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