MORPHOLOGY OF ELECTROCHEMICAL VAPOR-DEPOSITED YTTRIA-STABILIZED ZIRCONIA THIN-FILMS

被引:27
作者
CAROLAN, MF [1 ]
MICHAELS, JN [1 ]
机构
[1] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720
关键词
D O I
10.1016/0167-2738(90)90243-K
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Yttria-stabilized zirconia films were deposited over alumina substrates by electrochemical vapor deposition (EVD). It was observed that the films grew with the same yttrium-to-zircomium ratio as in the reactant gases. Films deposited at temperatures of 1075°C or below have a highly faceted surface and show a preferred crystallographic orientation. Films deposited at a temperature of 1100°C show a nearly smooth surface and no crystallographic orientation. The difference in morphology between the high temperature and lower temperature films can be explained by either a change in the relative rates of film growth and surface reconstruction or, more likely, a mobile surface species becoming thermodynamically unstable at the higher temperature. © 1990.
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页码:197 / 202
页数:6
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