FACTORS AFFECTING THE FRACTURE-TOUGHNESS OF SEMIINSULATING GAAS SINGLE-CRYSTALS

被引:0
|
作者
BIBERIN, VI
MEZHENNYI, MV
MILVIDSKII, MG
OSVENSKII, VB
STOLYAROV, OG
机构
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:310 / 313
页数:4
相关论文
共 50 条
  • [21] FRACTURE-TOUGHNESS OF SINGLE-CRYSTAL YAG
    MAH, T
    PARTHASARATHY, TA
    SCRIPTA METALLURGICA ET MATERIALIA, 1993, 28 (11): : 1383 - 1385
  • [22] STRUCTURAL FACTORS OF FRACTURE-TOUGHNESS OF DIE STEELS
    KRATOVICH, LF
    THACHEVSKAYA, GD
    METAL SCIENCE AND HEAT TREATMENT, 1988, 30 (7-8) : 508 - 513
  • [23] BEHAVIOR OF EL2-CENTERS IN SINGLE-CRYSTALS OF SEMIINSULATING GAAS DURING HEAT-TREATMENTS
    KARTAVYKH, AV
    YUROVA, ES
    MILVIDSKII, MG
    GRISHINA, SP
    KOVALCHUK, IA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (11): : 1287 - 1289
  • [24] MATERIAL FACTORS AFFECTING FRACTURE TOUGHNESS
    HODGE, JM
    TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1967, 10 (01): : 147 - &
  • [25] EVALUATING THE FRACTURE-TOUGHNESS OF SUCROSE CRYSTALS USING MICROINDENTATION TECHNIQUES
    DUNCANHEWITT, WC
    WEATHERLY, GC
    PHARMACEUTICAL RESEARCH, 1989, 6 (05) : 373 - 378
  • [26] SINGLE-CRYSTALS FOR GAAS ICS AND THEIR PROPERTIES
    AKAI, S
    SUZUKI, T
    DENKI KAGAKU, 1982, 50 (07): : 516 - 522
  • [27] SILICON DOPING OF GAAS SINGLE-CRYSTALS
    MORAVEC, F
    STEPANEK, B
    SESTAKOVA, V
    CRYSTAL RESEARCH AND TECHNOLOGY, 1992, 27 (04) : 477 - 479
  • [28] ASYMMETRIC DEFORMATION OF GAAS SINGLE-CRYSTALS
    BOOYENS, H
    VERMAAK, JS
    PROTO, GR
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5435 - 5440
  • [29] ELIMINATION OF DISLOCATIONS IN GAAS SINGLE-CRYSTALS
    DUSEAUX, M
    SCHILLER, C
    CORNIER, JP
    CHEVALIER, JP
    HALLAIS, J
    JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 397 - 407
  • [30] GROWTH OF DOUBLE DOPED SEMIINSULATING INDIUM-PHOSPHIDE SINGLE-CRYSTALS
    TOUDIC, Y
    COQUILLE, R
    GAUNEAU, M
    GRANDPIERRE, G
    LEMARECHAL, L
    LAMBERT, B
    JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) : 184 - 189