EFFECT OF NONPARABOLICITY IN GAAS/GA1-XALX AS SEMICONDUCTOR QUANTUM WELLS

被引：66

作者：

YOO, KH

RAMMOHAN, LR

NELSON, DF

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] WORCESTER POLYTECH INST,DEPT PHYS,WORCESTER,MA 01609

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.39.12808

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12808 / 12813

页数：6

共 12 条

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[8] BAND NONPARABOLICITY EFFECTS IN SEMICONDUCTOR QUANTUM-WELLS [J].

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[9] REFORMULATED HAMILTONIAN FOR NONPARABOLIC BANDS IN SEMICONDUCTOR QUANTUM WELLS [J].

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[10] TRANSFER-MATRIX ALGORITHM FOR THE CALCULATION OF THE BAND-STRUCTURE OF SEMICONDUCTOR SUPERLATTICES [J].

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PHYSICAL REVIEW B, 1988, 38 (09) :6151-6159

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