DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS

被引：132

作者：

ADLER, D ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW LETTERS | 1978年 / 41卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.41.1755

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1755 / 1758

页数：4

共 21 条

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[7]

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[8] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

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FRITZSCHE, H .

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[9]

KNIGHTS JC, 1977, 7TH P INT C AM LIQ S, P433

[10]

KNIGHTS JC, UNPUBLISHED

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