LOW-TEMPERATURE GROWTH OF THIN-FILMS OF AL2O3 BY SEQUENTIAL SURFACE CHEMICAL-REACTION OF TRIMETHYLALUMINUM AND H2O2

被引：58
作者：
FAN, JF
SUGIOKA, K
TOYODA, K
机构：
[1] The Institute of Physical and Chemical Research (RIKEN), Wako Saitama
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6B期
关键词：
HYDROGEN PEROXIDE; TRIMETHYLALUMINUM; ADSORPTION; SURFACE REACTION; GROWTH OF AL2O3;
D O I：
10.1143/JJAP.30.L1139
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hydrogen peroxide (H2O2) was used as the oxidant in a sequential surface-chemical-reaction-limited growth system to obtain high-quality thin films of Al2O3. It is observed that trimethylaluminum (TMA) reacts with H2O2 readily at temperatures as low as room temperature, resulting in the identical growth of Al2O3 wherever the reactants reach. The films are highly insulating and ideally uniform.
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页码：L1139 / L1141
页数：3
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