SPIN-PHONON INTERACTION IN LI-DOPED SI

被引：1

作者：

SUZUKI, K

MIKOSHIBA, N

机构：

[1] Department of Electrical spin-phonon interaction cannot be expected for Engineering, Waseda University, Tokyo, Shinjuku

[2] Electrotechnical Laboratory, Tanashi, Tokyo

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1969年 / 27卷 / 05期

关键词：

D O I：

10.1143/JPSJ.27.1207

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A theory is given for the spin-phonon interaction in Li-doped Si, where Li donors have an “inverted” Group-V-like ground state. It is shown that the Hasegawa-Roth mechanism of spin-phonon interaction for the “normal” Group-V-like ground state is too small to explain the ultrasonic spin resonance (USR) observed by Wigmore. The spin-phonon interaction via the impurity spin-orbit coupling gives rise to a sufficiently strong attenuation of ultrasonic waves in qualitative agreement with the experiment of USR. It is pointed out that the complicated structure observed in USR is due to the effect of random strains in the crystal. © 1969, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.

引用

页码：1207 / +

页数：1

共 13 条

[1] EXCITATION SPECTRA OF LITHIUM DONORS IN SILICON AND GERMANIUM [J].

AGGARWAL, RL ;

FISHER, P ;

MOURZINE, V ;

RAMDAS, AK .

PHYSICAL REVIEW, 1965, 138 (3A) :A882-&

[2] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].

BALSLEV, I .

PHYSICAL REVIEW, 1966, 143 (02) :636-&

[3] ORBACH SPIN-LATTICE RELAXATION OF SHALLOW DONORS IN SILICON [J].

CASTNER, TG .

PHYSICAL REVIEW, 1967, 155 (03) :816-&

[4]

GEIGER FE, 1968, R290 NASA TECH REP, P1

[5] SPIN-LATTICE RELAXATION OF SHALLOW DONOR STATES IN GE AND SI THROUGH A DIRECT PHONON PROCESS [J].

HASEGAWA, H .

PHYSICAL REVIEW, 1960, 118 (06) :1523-1534

[6] INTERACTION OF ACOUSTIC WAVES WITH DONOR SPINS IN GERMANIUM AND SILICON [J].

MIKOSHIBA, N ;

SUZUKI, K ;

ISHIGURO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 24 (02) :337-+

[7] CHEMICAL SPLITTING OF GROUND STATE OF LITHIUM DONOR IN SILICON [J].

NARA, H ;

MORITA, A .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 23 (04) :831-&

[8] G-FACTOR AND DONOR SPIN-LATTICE RELAXATION FOR ELECTRONS IN GERMANIUM AND SILICON [J].

ROTH, LM .

PHYSICAL REVIEW, 1960, 118 (06) :1534-1540

[9]

WATKINS GD, 1965, B AM PHYS SOC, V10, P303

[10]

WATKINS GD, PRIVATE COMMUNICATIO

← 1 2 →