VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN

被引：91

作者：

ITO, T

HIJIYA, S

NOZAKI, T

ARAKAWA, H

SHINODA, M

FUKUKAWA, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 03期

关键词：

D O I：

10.1149/1.2131471

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：448 / 452

页数：5

共 11 条

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[10] NITROGEN-SILICON REACTION AND ITS INFLUENCE ON DIELECTRIC STRENGTH OF THERMAL SILICON DIOXIDE [J].

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APPLIED PHYSICS LETTERS, 1975, 27 (03) :152-154

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