IMPROVED MODE-STABILITY IN LOW-THRESHOLD SINGLE-QUANTUM-WELL NATIVE-OXIDE DEFINED VERTICAL-CAVITY LASERS

被引：11

作者：

HUFFAKER, DL

SHIN, J

DENG, H

LIN, CC

DEPPE, DG

STREETMAN, BG

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 21期

关键词：

D O I：

10.1063/1.112589

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single quantum well active region vertical-cavity surface-emitting lasers (VCSELs) fabricated using a "native-oxide" technique are compared with three quantum well active region VCSELs. The single quantum well active region exhibits improved transverse mode stability under a variety of operating conditions. The suggested reason is due to the reduced gain of the single quantum well, which results in greater lasing mode selectivity. For the single quantum well active region, a continuous wave threshold current of 178 μA at room temperature is measured for a 5 μm diam VCSEL and a pulsed threshold of 160 μA. © 1994 American Institute of Physics.

引用

页码：2642 / 2644

页数：3

共 11 条

[1] DYNAMIC, POLARIZATION, AND TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL CAVITY SURFACE EMITTING LASERS [J].

CHANGHASNAIN, CJ ;

HARBISON, JP ;

HASNAIN, G ;

VONLEHMEN, AC ;

FLOREZ, LT ;

STOFFEL, NG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1402-1409

[2] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].

DALLESASSE, JM ;

HOLONYAK, N ;

SUGG, AR ;

RICHARD, TA ;

ELZEIN, N .

APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846

[3] SPONTANEOUS EMISSION AND OPTICAL GAIN IN A FABRY-PEROT MICROCAVITY [J].

DEPPE, DG ;

LEI, C .

APPLIED PHYSICS LETTERS, 1992, 60 (05) :527-529

[4] NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS [J].

HUFFAKER, DL ;

DEPPE, DG ;

KUMAR, K ;

ROGERS, TJ .

APPLIED PHYSICS LETTERS, 1994, 65 (01) :97-99

[5] MODE DEPENDENCE ON MIRROR CONTRAST IN FABRY-PEROT MICROCAVITY LASERS [J].

HUFFAKER, DL ;

LIN, CC ;

DEPPE, DG ;

STREETMAN, BG ;

ROGERS, TJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (02) :135-138

[6] LOW-THRESHOLD ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING MICROLASERS [J].

JEWELL, JL ;

SCHERER, A ;

MCCALL, SL ;

LEE, YH ;

WALKER, S ;

HARBISON, JP ;

FLOREZ, LT .

ELECTRONICS LETTERS, 1989, 25 (17) :1123-1124

[7] TRANSVERSE-MODE CHARACTERISTICS OF INGAAS/GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS CONSIDERING GAIN OFFSET [J].

KANEKO, Y ;

TAMANUKI, T ;

KATOH, M ;

MAEKAWA, H ;

KOYAMA, F ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (11A) :L1612-L1614

[8]

ROGERS T, UNPUB

[9] PHOTOPUMPED ROOM-TEMPERATURE CONTINUOUS OPERATION OF NATIVE-OXIDE-EMBEDDED ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL-HETEROSTRUCTURE LASERS [J].

SUGG, AR ;

CHEN, EI ;

RICHARD, TA ;

HOLONYAK, N ;

HSIEH, KC .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) :797-801

[10] SPONTANEOUS EMISSION AND THE CONCEPT OF EFFECTIVE AREA IN A VERY SHORT OPTICAL CAVITY WITH PLANE-PARALLEL DIELECTRIC MIRRORS [J].

UJIHARA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (5B) :L901-L903

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