2-DIMENSIONAL GROWTH OF GAN ON VARIOUS SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING RF-RADICAL NITROGEN-SOURCE

被引：20
作者：
KIKUCHI, A
HOSHI, H
KISHINO, K
机构：
[1] Department of Electrical and Electronics Engineering, Sophia University, Chiyoda-ku Tokyo, 102
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 2B期
关键词：
III-V NITRIDE SEMICONDUCTOR; GAN; GAS SOURCE MOLECULAR BEAM EPITAXY; RF-RADICAL BEAM SOURCE; RF-MBE; RADICAL NITROGEN; 2-DIMENSIONAL GROWTH; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;
D O I：
10.1143/JJAP.34.1153
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two-dimensional layer-by-layer growth conditions for GaN epitaxial layers by gas source molecular beam epitaxy (MBE) using a 13.56 MHz RF-radical nitrogen source were systematically investigated. As the growth rate was decreased, the reflection high-energy electron diffraction patterns of the GaN epitaxial layers grown on (0001) Al2O3 were changed from spotty patterns to streak ones in the earlier stage of GaN growth. It was clearly indicated that the lower growth rate (R<0.1 mu/h) enhanced the two-dimensional growth. Furthermore, the introduction of the annealed GaN buff er layers (60 Angstrom) drastically enhanced the two-dimensional growth of the layers on (0001) Al(2)O3, (001) MgO and (001) GaAs substrates. The surface morphology dependence on substrate materials was also described.
引用
收藏
页码：1153 / 1158
页数：6
相关论文
共 19 条
[1]   EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].
AKASAKI, I ;
AMANO, H ;
KOIDE, Y ;
HIRAMATSU, K ;
SAWAKI, N .
JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :209-219
[2]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[3]   METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].
AMANO, H ;
SAWAKI, N ;
AKASAKI, I ;
TOYODA, Y .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355
[4]   III-V NITRIDES FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS [J].
DAVIS, RF .
PROCEEDINGS OF THE IEEE, 1991, 79 (05) :702-712
[5]   EVALUATION OF A NEW PLASMA SOURCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF INN AND GAN FILMS [J].
HOKE, WE ;
LEMONIAS, PJ ;
WEIR, DG .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :1024-1028
[6]   SUBSTRATE NITRIDATION EFFECTS ON GAN GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY USING RF-RADICAL NITROGEN-SOURCE [J].
KIKUCHI, A ;
HOSHI, H ;
KISHINO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :688-693
[7]  
KIKUCHI A, IN PRESS J CRYST GRO
[8]   EPITAXIAL-GROWTH OF ZINC BLENDE AND WURTZITIC GALLIUM NITRIDE THIN-FILMS ON (001) SILICON [J].
LEI, T ;
FANCIULLI, M ;
MOLNAR, RJ ;
MOUSTAKAS, TD ;
GRAHAM, RJ ;
SCANLON, J .
APPLIED PHYSICS LETTERS, 1991, 59 (08) :944-946
[9]   P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES [J].
LIN, ME ;
XUE, G ;
ZHOU, GL ;
GREENE, JE ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1993, 63 (07) :932-933
[10]   GAN GROWN ON HYDROGEN PLASMA CLEANED 6H-SIC SUBSTRATES [J].
LIN, ME ;
STRITE, S ;
AGARWAL, A ;
SALVADOR, A ;
ZHOU, GL ;
TERAGUCHI, N ;
ROCKETT, A ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1993, 62 (07) :702-704
12