INFLUENCE OF MAGRIETIC FIELD ON ELECTRIC CHARGE TRANSPORT IN HOLOMIUN THIN FILMS AT LOW TEMPERATURES

被引：0

作者：

Dudas, Jan ^{[1
]}

Gabani, Stanislav ^{[2
]}

Kavecansky, Viktor ^{[2
]}

Vincze, Andrej ^{[3
]}

机构：

[1] Tech Univ, Fac Electrotech & Informat, Dept Therotical Eletrotech & Elect Measurement, Pk Komenskeho 3, Kosice 04389, Slovakia

[2] Slovak Acad Sci, Inst Expt Phys, Kosice 04001, Slovakia

[3] Int Laser Ctr, Bratislava 81219, Slovakia

来源：

ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING | 2005年 / 4卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Holmium thin films were prepared by evaporation in ultrahigh vacuum (UHV) and high precision electrical resistance measurements were performed on them as well as on holomium bulk sample in the wide temperature range from 4,2 K up to the room temperature. Electric charge transport is profoundly influenced by the magnetic structure at low temperatures and a "knee-like" resistance anomaly was observed near the transportation from paramagnetic state to basal-plane spiral structure in bulk with the Neel temperature T-N=128,9 K and below similar to 122 K in thin Ho films in a thickness range from 98 nm to 215 nm. Unexpected resistance minimum at similar to 9 K and a slope's charge of the R vs. T curve near similar to 170 K was observed in 215 nm thin film. Application of magnetic field parallel to the substrate and thin film plane for temperatures below similar to 150 K caused the decrease of resistence value with increasing magnetic flux density. Increasing suppression of the TN value up to similar to 5 K with increasing flux density value up to 5 T was observed in Ho films.

引用

页码：83 / 86

页数：4

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