ELECTRICALLY ACTIVE PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES

被引：3
作者：
MENDZ, G
HANEMAN, D
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1981年 / 26卷 / 02期
关键词：
D O I：
10.1007/BF00616654
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：87 / 92
页数：6
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