ELECTRICALLY ACTIVE PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES

被引：3

作者：

MENDZ, G

HANEMAN, D

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1981年 / 26卷 / 02期

关键词：

D O I：

10.1007/BF00616654

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：87 / 92

页数：6

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