SYMMETRY OF THE EL2 CENTER IN GAAS

被引：0
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作者：
BAGRAEV, NT
机构：
来源：
JETP LETTERS | 1991年 / 53卷 / 11期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Optical absorption under conditions of uniaxial compression of GaAs single crystals makes it possible to identify the model of an EL2 center. In this model the charge states of a double donor (D-degrees, D+, and D++) reveal a C3-upsilon symmetry and are formed from the wave functions L, GAMMA, and X, respectively, of the conduction band valleys.
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页码：573 / 578
页数：6
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