EFFECT OF SMALL TRANSVERSE DIMENSIONS ON OPERATION OF GUNN DEVICES

被引：78

作者：

KINO, GS

ROBSON, PN

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 11期

关键词：

D O I：

10.1109/PROC.1968.6787

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2056 / +

页数：1

共 14 条

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[7]

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[9]

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[10] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+

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