EPITAXIAL SI FILMS ON GE(100) GROWN VIA H/CL EXCHANGE

被引：26

作者：

GATES, SM

KOLESKE, DD

HEATH, JR

COPEL, M

机构：

[1] IBM T. J. Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.108895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465-degrees-C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475-degrees-C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.

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页码：510 / 512

页数：3

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