STRAIN-INDUCED INHOMOGENEITY OF SURFACE POTENTIAL ON FRESHLY CLEAVED SEMICONDUCTOR SURFACES

被引：8

作者：

FISCHER, TE

VILJOEN, PE

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.26.1475

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1475 / &

共 9 条

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[2]

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[4]

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[5] TRANSMISSION ELECTRON MICROSCOPY OF CLEAVED SILICON [J].

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[7] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

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GOBELL, GW ;

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[8]

MACRAE AU, 1964, J APPL PHYS, V35, P1629

[9]

VILJOEN PE, 1971, 31 P C PHYS EL GAIT