TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES

被引：101
作者：
CHIN, R
HOLONYAK, N
VOJAK, BA
HESS, K
DUPUIS, RD
DAPKUS, PD
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[3] ROCKWELL INT,ELECTR RES CTR,DIV ELECTR DEVICES,ANAHEIM,CA 92803
来源：
APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 01期
关键词：
D O I：
10.1063/1.91290
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：19 / 21
页数：3
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