OPTICAL CHARACTERIZATION OF GAAS-LAYERS GROWN BY VAPOR-PHASE EPITAXY

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作者：

WARRIER, AVR

ABHA

CHANDRA, I

JAIN, BP

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INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1979年 / 17卷 / 06期

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O4 [物理学];

学科分类号：

0702 ;

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页码：354 / 356

页数：3

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共 7 条

[1]

GRISHINA SP, 1970, SOV PHYS SEMICOND+, V4, P240

[2] OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4584-&

[3] ARSENIC VACANCY FORMATION IN GAAS ANNEALED IN HYDROGEN GAS-FLOW [J].

ITOH, T ;

TAKEUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (02) :227-232

[4] THERMAL-DEGRADATION OF HOMOEPITAXIAL GAAS INTERFACES [J].

LUM, WY ;

WIEDER, HH ;

KOSCHEL, WH ;

BISHOP, SG ;

MCCOMBE, BD .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :1-3

[5] PHOTOLUMINESCENCE STUDY OF DEFECTS IN GAAS FORMED BY ANNEALING IN AN H-2 GAS-FLOW [J].

OTSUBO, M ;

MIKI, H ;

MITSUI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) :1957-1966

[6]

Williams E.W., 1992, SEMICONDUCTOR SEMIME, V8, P321

[7] EVIDENCE FOR SELF-ACTIVATED LUMINESCENCE IN GAAS - GALLIUM VACANCY-DONOR CENTER [J].

WILLIAMS, EW .

PHYSICAL REVIEW, 1968, 168 (03) :922-&