CHARACTERIZATION OF SILICON-ON-SAPPHIRE IGFET TRANSISTORS

被引：30
作者：
ELMANSY, YA [1 ]
CAUGHEY, DM [1 ]
机构：
[1] BELL NO RES,OTTAWA,ONTARIO,CANADA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 09期
关键词：
D O I：
10.1109/T-ED.1977.18898
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1148 / 1153
页数：6
相关论文
共 8 条
[1]   HIGH-PERFORMANCE LOW-POWER CMOS MEMORIES USING SILICON-ON-SAPPHIRE TECHNOLOGY [J].
BOLEKY, EJ ;
MEYER, JE .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) :135-&
[2]  
CAUGHEY M, 1973, SOLID STATE TECHNOL, V16, P33
[3]   SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].
ELMANSY, YA ;
BOOTHROYD, AR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :254-262
[4]   NEW APPROACH TO THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].
ELMANSY, YA ;
BOOTHROYD, AR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :241-253
[5]  
ELMANSY YA, 1975, IEDM, P31
[6]  
KENNEDY DP, 1973, IEDM, P160
[7]   IMPACT IONIZATION CURRENT IN MOS DEVICES [J].
LATTIN, WW ;
RUTLEDGE, JL .
SOLID-STATE ELECTRONICS, 1973, 16 (09) :1043-1046
[8]   PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME [J].
TIHANYI, J ;
SCHLOTTERER, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1017-1023
1