BALLISTIC ELECTRON-EMISSION MICROSCOPY OF SCHOTTKY DIODES ON RF-PLASMA-TREATED SILICON

被引：10

作者：

QUATTROPANI, L

SOLT, K

NIEDERMANN, P

MAGGIOAPRILE, I

FISCHER, O

PAVELKA, T

机构：

[1] LANDIS & GYR BETRIEBS CORP,CH-6301 ZUG,SWITZERLAND

[2] SEMICOND PHYS LAB CORP,H-1327 BUDAPEST,HUNGARY

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷 / 1 -4 pt A期

关键词：

D O I：

10.1016/0169-4332(93)90463-L

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

PtSi/n-Si(100) diodes were prepared by sputter-deposition of Pt where some of the Si substrates had previously been subjected to a strong plasma cleaning. Samples were investigated by I-V measurements, deep-level transient spectroscopy, and ballistic electron emission microscopy (BEEM). As a result of the strong plasma cleaning, both I-V and BEEM showed the Schottky barrier to be substantially reduced by about 0.2 eV as compared to very mildly plasma-cleaned samples. We present a model for the BEEM spectra which takes image force correction and tunneling across the metal/semiconductor interface into account. These effects occur because of the high electric field near the interface due to donor-type defects introduced by the plasma cleaning.

引用

页码：391 / 395

页数：5

共 15 条

[1] ELECTRICAL CHARACTERISTICS OF SPUTTERING-INDUCED DEFECTS IN TYPE-N SILICON [J].

ANDERSSON, LP ;

EVWARAYE, AO .

VACUUM, 1978, 28 (01) :5-7

[2] OBSERVATION OF INTERFACE BAND-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

BELL, LD ;

KAISER, WJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (20) :2368-2371

[3] SUBSTRATE SURFACE DAMAGES BY RF-SPUTTERING [J].

BERG, S ;

ANDERSSON, LP ;

NORSTROM, H ;

GRUSELL, E .

VACUUM, 1977, 27 (03) :189-191

[4] A SCANNING TUNNELING MICROSCOPE COMBINED WITH A SCANNING FIELD-EMISSION MICROSCOPE [J].

EMCH, R ;

NIEDERMANN, P ;

DESCOUTS, P ;

FISCHER, O .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02) :379-379

[5] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON [J].

FONASH, SJ ;

ASHOK, S ;

SINGH, R .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :423-425

[6] IN-DEPTH PROFILING OF SPUTTER-INDUCED SPACE-CHARGE COMPENSATION IN P-SILICON SCHOTTKY BARRIERS [J].

HELLINGS, GJA ;

STRAAYER, A ;

KIPPERMAN, AHM .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2067-2071

[7] DIRECT INVESTIGATION OF SUBSURFACE INTERFACE ELECTRONIC-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

KAISER, WJ ;

BELL, LD .

PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1406-1409

[8] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J].

MULLINS, FH ;

BRUNNSCHWEILER, A .

SOLID-STATE ELECTRONICS, 1976, 19 (01) :47-50

[9] BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDY OF PTSI-N-SI(100) SCHOTTKY DIODES [J].

NIEDERMANN, P ;

QUATTROPANI, L ;

SOLT, K ;

KENT, AD ;

FISCHER, O .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :580-585

[10]

Rhoderick E H., 1988, METAL SEMICONDUCTOR

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